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UTC BT151
SCRs
DESCRIPTION
Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.
SCR
SYMBOL
1
A
K
G
1: CATHODE 2: ANODE
TO-220
3: GATE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Repetitive peak off-state voltages BT151-500 BT151-650 BT151-800 Average on-state current (half sine wave; Tmb 109 C)
SYMBOL
VDRM , VRRM
RATING
500* 650* 800 7.5
UNIT
V
IT(AV)
A
RMS on-state current (all conduction angles) IT(RMS) 12 A Non-repetitive peak on-state current (half sine wave; Tj = 25 C prior to surge) A ITSM t = 10 ms 100 t = 8.3 ms 110 I2t for fusing (t = 10 ms) I2t 50 A2s Repetitive rate of rise of on-state current after triggering A/s dIT /dt 50 (ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/ms) Peak gate current IGM 2 A Peak gate voltage VGM 5 V Peak reverse gate voltage VRGM 5 V Peak gate power (over any 20 ms period) PGM 5 W Average gate power PG(AV) 0.5 W Storage temperature Tstg -40~150 Operating junction temperature Tj 125 *Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/s.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-007,B
UTC BT151
THERMAL RESISTANCES
PARAMETER
Thermal resistance Junction to mounting base Thermal resistance Junction to ambient In free air
SCR
SYMBOL
Rth j-mb Rth j-a 60
MIN
TYP
MAX
1.3
UNIT
K/W K/W
STATIC CHARACTERISTICS(Tj=25C,unless otherwise stated)
PARAMETER
Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current
SYMBOL
IGT IL IH VT VGT ID , IR
CONDITIONS
VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 23 A VD = 12 V; IT = 0.1 A VD = VDRM(max) ; IT = 0.1 A; Tj = 125 C VD = VDRM(max) ; VR = VRRM(max) ; Tj = 125 C
MIN
TYP
2 10 7 1.4 0.6 0.4 0.1
MAX
15 40 20 1.75 1.5 0.5
UNIT
mA mA mA V V mA
0.25
DYNAMIC CHARACTERISTICS(Tj=25C,unless otherwise stated)
PARAMETER
Critical rate of rise of off-state voltage
SYMBOL
dVD /dt
CONDITIONS
VDM = 67% VDRM(max) ; Tj = 125 C; exponential waveform; Gate open circuit RGK = 100 ITM = 40 A; VD = VDRM(max) ; IG = 0.1 A; dIG /dt = 5 A/s VD = 67% VDRM(max) ; Tj = 125 C; ITM = 20 A; VR = 25 V; dITM /dt = 30 A/s; dVD /dt = 50 V/s; RGK = 100
MIN
TYP
MAX UNIT
V/s s s
50 200
Gate controlled turn-on time Circuit commutated Turn-off time
tgt tq
130 1000 2 70
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-007,B
UTC BT151
15 Ptot/W
conduction angle degrees 30 60 90 120 180 form factor a 4 2.8 2.2 1.9 1.57
SCR
Tmb(max)/C 105.5 a=1.57 1.9 112 120 100 80 60 118.5 40 20 125 8 0 1 10 100 1000 Number of half cycles at 50Hz Fig4.Maximum Permissible non-repetitive peak on-state current ITSM ,versus number of cycles,for sinusoidal currents,f=50HZ. T time
Tj initial=25m ax
ITSM/A IT ITSM
2.2 2.8 4
10
5
0
0
4 6 5 7 IT(RMS)/A Fig.1. Maximum on-state dissipation,P tot,versus average on-state current,IT(AV),where a=form factor=IT(RMS)/IT(AV). 1 2 3
1000
ITSM/A
25 20
IT(RMS)/A
dIT/dt limit 100 IT ITSM time 10 10us
Tj initial=25m ax
15 10 5 1ms 10ms 0 0.01 0.1 1 10 surge duration /S Fig. 5.Maximum permissible repetitive rms on-state current lT(RMS),versus surge duration,for sinusoidal currents,f=50HZ;Tmb 109
100us
T/s Fig.2.Maximum Permissible non-repetitive peak on-state Current ITSM,versus pulse width tp , for sinusoidal currents,tp10ms
15
IT(RMS)/A 109
1.6 1.4 1.2
VGT(Tj) VGT(25)
10 1 0.8 5 0 -50 0 50 Tmb/C Fig.3. Maximum permissible rms current lT(RMS), versus mounting base temperature T m b 100 150 0.6 0.4 -50
0 0
50 50 Tj/
100 100
150 150
Fig.6. Normalised gate trigger voltage V GT (T j)/V GT (25),versus junction temperature Tj.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-007,B
UTC BT151
IGT(Tj) IGT(25) 30 25 2.5 2 1.5 1 0.5 0 -50 0 50 100 150 20 15 10 5 0 IT/A Tj=125 Tj=25
SCR
3
typ max
0
0.5
1 VT/V
1.5
2
Tj/C Fig. 7.Normalised gate trigger Current IGT(Tj)/IGT(25),versus junction temperature Tj. IL(Tj) IL(25)
Fig.10.Typical and maximum on-state characteristic.
3 2.5 2 1.5 1
10 1 0.1
Zth j-mb(K/W)
0.01 0.5 0 -50 0 50 Tj/C Fig.8.Normalised latching Current IL(Tj)/IL(25), versus junction temperature Tj IH(Tj) IH(25) 100 150 0.001 10us 0.1ms 1ms 10ms tp/s
PD
tp t
0.1s
1s
10s
Fig.11.Transient thermal impedance Zthj-mb, versus pulse width tp. dVD/dt(V/us)
3 2.5 2 1.5 1 .5
10000
1000 RGK=100 100 gate open circuit
0 -50
0
10 50 Tj/C 100 150
0
50 Tj/C
100
150
Fig. 9.Normalised holding current IH(Tj)/IH(25), versus junction temperature Tj.
Fig.12.Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-007,B
UTC BT151
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
5
QW-R301-007,B

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